Heraeus Electronics’ ALL2GaN event showcases advances in high-efficiency power electronics – Charged EVs

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Heraeus Electronics will host an event focusing on the latest developments in high-efficiency power electronics, particularly the capabilities of gallium nitride (GaN) chips, which offer high efficiency, high power density and compact sizes.

Heraeus will host this ALL2GaN event April 9-10 at its facilities in Hanau, Germany. The company is part of the EU-funded research project ALL2GaN (Affordable smart GaN IC solutions for greener applications). This initiative, which involves 45 partners, aims to achieve a 30% energy efficiency improvement with GaN compared to silicon.

At the ALL2GaN event, Heraeus Electronics will showcase its latest innovations tailored to meet the demands of miniaturization and high power density required by GaN chips. The company will highlight its Fine Pitch Sinter pastes and Die Top System/Bonding wires, designed to optimize the performance of GaN chips.

Heraeus has already made significant progress in processing GaN semiconductors, and reports promising results indicating superior shear forces and enhanced robustness with pressure sinter pastes. Preliminary test results with finer Cu and Al wires have also been promising, and prototype samples with small Die Top Systems have been successfully produced. Heraeus Electronics is actively collaborating with customers to refine layout designs.

Source: Heraeus Electronics



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