Sponsored by TTI.
Nowadays, Silicon Carbide (SiC) and Gallium Nitride (GaN) are regular headline grabbers in the technical press. This is because devices constructed using these wide bandgap technologies are superior to their silicon counterparts across many critical metrics and open up new, previously unfeasible applications.
This white paper describes the structure and applications of SiC diodes and explains their advantages over silicon devices. It then introduces a new range of SiC diodes developed by Nexperia to have a thinner device structure and discusses the additional benefits these provide over standard SiC diodes in power applications.
