The world’s largest chemical producer, Germany’s BASF, has developed a polyphthalamide (PPA) for manufacturing housings of insulated-gate bipolar transistor (IGBT) semiconductors for next-generation power electronics.
The Ultramid Advanced N3U41 G6 is designed to meet the growing demand for high-performance, reliable electronic components for EVs, as well as high-speed trains, smart manufacturing and renewable electricity generation.
These applications require materials that can withstand higher temperatures, provide sustained electrical insulation, and maintain dimensional stability under challenging environmental conditions like humidity, dust and dirt.
The laser-sensitive Ultramid Advanced N3U41G6 with non-halogenated flame retardant combines high thermal stability with low water uptake and high-performance electrical properties. It is characterized by a high Comparative Tracking Index (CTI) of 600, supporting the miniaturization of IGBTs by lower creepage and enhanced insulation compared to materials so far used for power switches, according to the company. The UL-certified grade shows an electrical Relative Temperature Index (RTI) value of 150° C.
For IGBT manufacturing, the PPA is compatible with potting materials used to assemble the semiconductors with metal pins and clamps after injection molding.
“BASF’s PPA compound is globally available and ready for sampling,” said Jochen Seubert, senior application expert for power electronics at BASF. “Backed by our customer-focused technical support in part development, we expect this material to contribute to the advancement of power electronics.”
Source: BASF
